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1/8 semiconductor technical data GM100HB12BTA 1200v/100a 2-pack igbt module (half - bridge) features h field stop trench technology h low v ce(sat) h low turn-off loss h short tail current h positive temperature coefficient h 10us short circuit capability h ul recognized. file no. e305401 application h motor controls h general purpose inverters h servo controls internal circuit + _ 13 0.3 + _ 14 0.3 + _ 13 0.3 + _ 13 0.3 + _ 17 0.3 + _ 6 0.5 outline drawing unit : mm 35 0.5 + _ 28 0.5 + _ 25 0.3 + _ 17 0.3 + _ 93 0.5 + _ 80 0.5 + _ 23 0.3 + _ + _ 23 0.3 30 0.5 + _ 22 0.5 + _ + _ 30 0.5 + _ 31 0.5 1 6 7 5 4 23 maximum rating (ta=25 ? ) 1 2 6 7 3 5 4 1. c2 /e1 2. e2 3. c1 4. g1 5. e1 6. g2 7. e2 2018. 01. 09 revision no : 1 characteristic symbol rating unit collector-to-emitter voltage v ces 1200 v gate-emitter voltage v ges ? 20 v continuous collector current dc i c 100 a pulsed collector current 1ms i cp 200 a power dissipation p d 416 w isolation voltage test ac @ 1 minute v iso 2500 v junction temperature t j -40 ~ +150 ? storage temperature t stg -40 ~ +125 ? weight weight 190 ? 5 g mounting torque (m6) m 5 n.m terminal connection torque (m5) m 4 n.m
2/8 GM100HB12BTA thermal characteristic electrical characteristics (ta=25 ? ) characteristic symbol max unit junction to case (igbt part, per 1/2 module) r th(j-c) 0.3 ? /w junction to case (diode part, per 1/2 module) r th(j-c) 0.49 2018. 01. 09 revision no : 1 characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =1ma - 5.8 - v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =100a - 2.1 2.5 v v ge =15v, i c =100a, t c = 125 ? - 2.2 - v v ge =15v, i c =200a - 2.7 - v dynamic total gate charge q g v ce =600v, v ge = ? 15v, i c = 100a - 664 - nc gate-emitter charge q ge - 123 - nc gate-collector charge q gc - 351 - nc turn-on delay time t d(on) v ce =600v, i c =100a, v ge = ? 15v,r g =10 ? inductive load, t c = 25 ? - 331 - ns rise time t r - 163 - ns turn-off delay time t d(off) - 581 - ns fall time t f - 155 - ns turn-on switching loss e on - 13.3 - mj turn-off switching loss e off - 10.4 - mj total switching loss e ts - 23.7 - mj turn-on delay time t d(on) v ce =600v, i c =100a, v ge = ? 15v, r g =10 ? inductive load, t c = 125 ? - 330 - ns rise time t r - 169 - ns turn-off delay time t d(off) - 624 - ns fall time t f - 152 - ns turn-on switching loss e on - 13.8 - mj turn-off switching loss e off - 11.3 - mj total switching loss e ts - 25.1 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 15148 - pf ouput capacitance c oes - 616 - pf reverse transfer capacitance c res - 179 - pf short circuit current i sc v cc =600v, v ge = ? 15v, t psc ? 10us - 540 - a
2018. 01. 09 3/8 GM100HB12BTA revision no : 1 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 100a t c =25 ? - 2.2 2.6 v t c =125 ? - 2.3 - diode reverse recovery time t rr i f =100a, r g =10 ? t c =25 ? - 174 209 ns t c =125 ? - 218 - diode peak reverse recovery current i rr t c =25 ? - 59 71 a t c =125 ? - 74 - diode reverse recovery charge q rr t c =25 ? - 5.77 6.92 nc t c =125 ? - 9.2 -
2018. 01. 09 4/8 GM100HB12BTA revision no : 1 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 6. capacitance characteristics capacitance (pf) collector - emitter voltage v ce (v) 0 200 160 120 40 80 180 140 100 20 60 02 134 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 200 180 160 140 120 100 80 60 40 20 0 v ge = 20v 14v 15v 18v 12v 10v 8v t c =25 c common emitter common emitter v ge = 15v i c = 100a i c = 200a 1 10 100 100 1000 10000 100000 cies coes cres 16 20 12 8 4 0 01620 12 8 4 i c = 100a i c = 50a i c = 200a common emitter t c =25 c collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) fig 5. saturation voltage vs. v ge case temperature t c ( ) c 16 20 12 8 4 0 01620 12 8 4 i c = 100a i c = 50a i c = 200a common emitter t c =125 c common emitter v ge = 0v, f = 1mhz t c = 25 c 25 common emitter v ge = 15v t c = t c = c 125 c
2018. 01. 09 5/8 GM100HB12BTA revision no : 1 collector current i c ( ) switching time (ns) 060 30 120 90 150 210 180 1 10 100 1000 fig 10. turn-on characteristics vs. collector current collector current i c ( ) switching time (ns) fig 11. turn-off characteristics vs. collector current collector current i c ( ) switching time (ns) fig 12. turn-off characteristics vs. collector curren t gate resistance r g ( ) switching loss (mj) fig 9. switching loss vs. gate resistance 030 90 60 120 210 180 150 0.1 100 10 1 eoff eon fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ) gate resistance r g ( ) switching time (ns) switching time (ns) 0 20 40 60 70 80 90 100 110 10 30 50 0 20 40 60 70 80 90 100 110 10 30 50 10 100 1000 10000 10 100 10000 1000 tf td(off) fig 8. turn-off characteristics vs. gate resistance 0 20 40 60 70 80 90 100 110 10 30 50 1 10 100 25 common emitter v cc = 600v, v ge = 15v i c = 100a t c = t c = c 125 c 25 common emitter v cc = 600v, v ge = 15v i c = 100a t c = t c = c 125 c 25 common emitter v cc = 600v, v ge = 15v i c = 100a t c = t c = c 125 c tr td(on) tr td(on) 25 common emitter v cc = 600v, v ge = 15v r g = 10 t c = t c = c 125 c 060 30 120 90 150 210 180 1 10 100 1000 10000 tf td(off) 25 common emitter v cc = 300v, v ge = 15v r g = 10 t c = t c = c 125 c 25 common emitter v cc = 600v, v ge = 15v r g = 10 t c = t c = c 125 c eoff eon
2018. 01. 09 6/8 GM100HB12BTA revision no : 1 rectan g ular pulse duration (sec) thermal resistance (zthjc) collector - emitter voltage v ce (v) collector current i c (a) fig 14. reverse bias safe operating area (max) 0 200 400 600 800 1000 1200 1400 0 100 150 250 200 50 10 -5 10 -3 10 -2 10 -1 10 0 10 2 10 1 10 -4 10 -2 10 -1 10 1 10 0 fig15. transient thermal response curve igbt : diode : v ge = 15v t c = 25 c, r g = 10 collector - emitter voltage v ce (v) gate-emitter voitage v ge (v) fig 13. gate charge characteristics gate charge q g ( nc ) -200 -100 0 100 200 300 400 500 600 700 -15 -10 -5 0 5 10 15 20 -600 -400 -200 0 200 400 600 800 common emitter i c = 100 t c = 25 c v ge v ce
2018. 01. 09 7/8 GM100HB12BTA revision no : 1 forward voltage v f (v) fig 16. forward characteristics forward current i f (a) forward current i f (a) reverse recovery time t rr (ns) 0 60 120 30 90 180 210 150 0 200 250 300 150 50 100 25 common emitter v cc = 600v, v ge = 15v r g = 10 t c = t c = c 125 c forward current i f (a) reverse recovery current i rrm (a) 0 60 120 30 90 180 210 150 0 60 70 90 80 50 30 20 10 40 fig 17. reverse recovery current fig 18. reverse recovery current 25 common emitter v cc = 600v, v ge = 15v r g = 10 t c = t c = c 125 c 0 1 10 100 1000 123 4 25 t c = c 125 t c = c
2018. 01. 09 8/8 GM100HB12BTA revision no :1 fig 19. switching test circuit fig 20. definition switching time & loss fig 21. definition diode switching time 90% 90% 10% + vge vge vce ic ic ic ic t2 t1 tf vce ic dt eoff t1
? t2 = td (off) vcc 10% irr qrr vpk ic diode reverse waveforms t rr tx ic dt tx trr =
? gate voltage dut 10% + vg 10% 90% + vg vce vce ic dt eon vcc ic ic ic ipk td tr t1 t1 t2 t2 (on) out voltage and current =
? diode clamp c c g g e e l measurement pulse /dut dut/ vge = 15v -10v 600v rg driver + + _ _

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